EXPITAXIAL TILTING OF GAN GROWN ON VICINAL SURFACES OF SAPPHIRE
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Michael Dudley | Russell D. Dupuis | U. Chowdhury | R. Dupuis | M. Dudley | J. Bai | J. Bai | X. R. Huang | U. Chowdhury
[1] Hajime Okumura,et al. Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy , 2003 .
[2] E. Alp,et al. Measuring wavelengths and lattice constants with the Mössbauer wavelength standard , 2001 .
[3] L. P. Van,et al. High-temperature transformation of vicinal (0001) Al2O3-α surfaces: an AFM study† , 2000 .
[4] S. Tong,et al. Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy , 2000 .
[5] G. Radnóczi,et al. Growth of GaN layers onto misoriented (0001) sapphire by metalorganic chemical vapor deposition , 1999 .
[6] L. P. Van,et al. Evolution of steps on vicinal (0001) surfaces of α-alumina , 1998 .
[7] C. Barry Carter,et al. Mechanisms of surface faceting and coarsening , 1997 .
[8] A. Holmes,et al. The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition , 1996 .
[9] C. T. Foxon,et al. Lattice parameters of gallium nitride , 1996 .
[10] F. Riesz. Crystallographic tilting in high-misfit (100) semiconductor heteroepitaxial systems , 1996 .
[11] Tsuyoshi Ohnishi,et al. Atomic‐scale formation of ultrasmooth surfaces on sapphire substrates for high‐quality thin‐film fabrication , 1995 .
[12] H. Nagai. Structure of vapor‐deposited GaxIn1−xAs crystals , 1974 .