Low-cost silicon receiver OEICs

The state of the art of silicon optoelectronic integrated circuits (OEICs) is described. It is verified that silicon OEICs achieve both high sensitivities and high bandwidths up to the GHz range. Silicon OEICs,therefore, compete successfully with III/V OEICs for low-cost high-volume applications.Results of advanced monolithically integrated photodiodes available in CMOS and BiCMOS technologies are presented. The technological aspects for the monolithic integration of photodiodes are addressed and the properties of the so-called double photodiode and of the pin photodiode are described. The innovative integrated double photodiode allowing data rates of 622 Mb/s is available in standard silicon technologies without any process modification. For the integration of the pin photodiode allowing data rates of higher than 1 Gb/s usually at least one additional mask is required. It will be shown that the pin photodiode also can be implemented without an additional mask. The second main part of this article covers circuits of optical fiber and interconnect receivers with data rates of up to 1 Gb/s as well as advanced DVD pick-up OEICs with bandwidths of up to 150 MHz. The fiber receivers achieve an effective transimpedance of 45.9 k(Omega) and the sensitivity of this OEIC in a 1.0 micrometers CMOS technology with a data rate of 1 Gb/s is improved by 9 dB compared to that of a published OEIC in a 0.35 micrometers CMOS technolgy.

[1]  T. Heide,et al.  Monolithic high-speed CMOS-photoreceiver , 1999, IEEE Photonics Technology Letters.

[2]  K. Kieschnick,et al.  Integrated High-speed, High-responsivity Photodiodes in CMOS and BiCMOS Technology , 1999, 29th European Solid-State Device Research Conference.

[3]  H. Zimmermann,et al.  A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology , 2001, IEEE Photonics Technology Letters.

[4]  J.C. Campbell,et al.  A silicon NMOS monolithically integrated optical receiver , 1997, IEEE Photonics Technology Letters.

[5]  Ashok V. Krishnamoorthy,et al.  1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm , 1998 .

[6]  M. Kyomasu,et al.  Development of an integrated high speed silicon PIN photodiode sensor , 1995 .

[7]  T. K. Woodward,et al.  Prospects for silicon monolithic opto-electronics with polymer light emitting diodes , 1994 .

[8]  T. K. Woodward,et al.  Optoelectronic VLSI switching chip with greater than 1 Tbit/s potential optical I/O bandwidth , 1997 .

[9]  Horst Zimmermann,et al.  Advanced photo integrated circuits in CMOS technology , 1999, 1999 Proceedings. 49th Electronic Components and Technology Conference (Cat. No.99CH36299).

[10]  Herschel A. Ainspan,et al.  Performance of fiber-optic data links using 670-nm cw VCSELs and a monolithic Si photodetector and CMOS preamplifier , 1994, IBM J. Res. Dev..

[11]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[12]  K. Nakao,et al.  Si-OEIC with a built-in PIN-photodiode , 1995 .

[13]  Franco Zappa,et al.  A VLSI-compatible high-speed silicon photodetector for optical data link applications , 1996 .

[14]  K. Kieschnick,et al.  Advanced CMOS and BiCMOS photonic receiver ICs , 1999, Proceedings of the 25th European Solid-State Circuits Conference.

[15]  U. Hilleringmann,et al.  System integration of optical devices and analog CMOS amplifiers , 1994 .

[16]  K. Kieschnick,et al.  High-bandwidth BiCMOS OEIC for optical storage systems , 1999, 1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278).

[17]  K. Ebeling Integrated Optoelectronics: Waveguide Optics, Photonics, Semiconductors , 1993 .

[18]  Horst Zimmermann,et al.  High-performance receivers for optical interconnects in standard MOS technology , 2001, SPIE OPTO.