Study of the set statistical characteristics in the Cu/HfO2/Pt-based RRAM device

The variation of resistive switching (RS) parameters is one of the major challenges to push resistive random access memory (RRAM) into application. In this paper, with a statistical methodology, for the first time we study the statistical distributions of set parameters of the Cu/HfO2/Pt based conductive bridge random access memory (CBRAM). The distributions of the set parameters in each off resistance range are shown to nicely fit a Weibull model. The Weibull slope and scale factor of the set voltage increase logarithmically with the geometric mean of off resistance in different ranges, which can be well explained by the cell-based percolation model of set statistics. And also for the first time, we revel that the Weibull slope of the set current decreases logarithmically with the off resistance. Our study is of significance to reduce the fluctuation of the resistive switching parameters.

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