Transmission electron microscopy study of the InP/InGaAs and InGaAs/InP heterointerfaces grown by metalorganic vapor-phase epitaxy

InP/InGaAs and InGaAs/InP interfaces in heterostructures grown by metalorganic vapor-phase epitaxy (MOVPE) have been studied by transmission electron microscopy (TEM). Cross-sectional TEM 002 dark field images of the direct (InP–InGaAs) and inverted (InGaAs–InP) interfaces revealed a great difference in abruptness. Whereas the direct interface is always well defined and flat, the inverted one is compositionally graded and shows surface undulations. InP–InGaAs heterostructures were studied for different layer thicknesses and phosphine flow rates. The results indicate that this effect originates more from the substitution of arsenic by phosphorus atoms in subsurface InGaAs monolayers rather than from As carryover to the InP layer. The strong As–P exchange observed over several InGaAs monolayers is related to the large difference in chemical bond strength between Ga–As and Ga–P. This is supported by comparison with InP/InAlAs/InP and InP/In1−xGaxAsyP1−y/InP (0.1

[1]  E. Yu,et al.  Interface structure in arsenide/phosphide heterostructun grown by gas-source MBE and low-pressure MOVPE , 1997 .

[2]  Reduction of as carryover by PH3 overpressure in metalorganic vapor-phase epitaxy , 1997 .

[3]  T. Mozume,et al.  Tailored heterointerface formation in InGaAs/InP superlattices by gas source migration-enhanced epitaxy , 1994 .

[4]  F. Mollot,et al.  Interface quality and electron transfer at the GaInP on GaAs heterojunction , 1998 .

[5]  Didier Decoster,et al.  High speed evanescently coupled PIN photodiodes for hybridisation on silicon platform optimised with genetic algorithm , 2001 .

[6]  H. Asahi,et al.  Atomically controlled InGaAs/InP superlattices grown by gas source MEE (migration enhanced epitaxy) , 1993 .

[7]  T. Anan,et al.  Improvement of InP/InGaAs heterointerfaces grown by gas source molecular beam epitaxy , 1993 .

[8]  D. Thompson,et al.  Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence , 1997 .

[9]  T. Tanoue,et al.  Effect of source-supply interruptions on the interface abruptness in gas source molecular beam epitaxy grown InGaAs/InP heterostructures , 1995 .

[10]  J. Epler,et al.  Evolution of surface topography during metalorganic vapor phase epitaxy of InP/InGaAs/InP quantum well heterostructures , 1994 .

[11]  M. Aylett,et al.  Characterization of InP to GaInAs and GaInAs to InP interfaces using tilted cleaved corner TEM , 1992 .

[13]  A. Mircea,et al.  Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE , 1992 .

[14]  H. Maher,et al.  Doping optimizations for InGaAs/InP composite channel HEMTs , 1998 .

[15]  L. Lazzarini,et al.  The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wells , 1993 .