Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost eectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the active edge concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for dierent sensor congurations. First preliminary results obtained with the test-structures of the production are shown.

[1]  Ruth H. Pater,et al.  Nuclear Instruments and Methods in Physics Research. Section B; Microstructural Characterization of Semi-Interpenetrating Polymer Networks by Positron Lifetime Spectroscopy , 1998 .

[2]  S. Dube,et al.  The FE-I4 pixel readout integrated circuit , 2011 .

[3]  H. Pernegger,et al.  Characterization and performance of silicon n-in-p pixel detectors for the ATLAS upgrades , 2010, 1012.3595.

[4]  France,et al.  Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades , 2012, 1211.5229.

[5]  Alvise Bagolini,et al.  Optimization of double-side 3D detector technology for first productions at FBK , 2011, 2011 IEEE Nuclear Science Symposium Conference Record.

[6]  R. Bates,et al.  Simulations of radiation-damaged 3D detectors for the Super-LHC , 2008 .

[7]  Maurizio Boscardin,et al.  3D silicon sensors: Design, large area production and quality assurance for the ATLAS IBL pixel detector upgrade , 2012 .

[8]  L. Blanquart,et al.  The FEI3 readout chip for the ATLAS pixel detector , 2006 .

[9]  Alvise Bagolini,et al.  Development of planar detectors with active edge , 2011 .

[10]  R. Klanner,et al.  Optimization of the radiation hardness of silicon pixel sensors for high x-ray doses using TCAD simulations , 2011, 1111.4901.

[11]  Marko Zavrtanik,et al.  Determination of effective trapping times for electrons and holes in irradiated silicon , 2002 .

[12]  S. Parker,et al.  Results from 3-D silicon sensors with wall electrodes: near-cell-edge sensitivity measurements as a preview of active-edge sensors , 2001 .