Direct extraction of LDMOS small signal parameters from off-state measurements

A small signal parameter extraction procedure is presented suitable for power LDMOSFET devices for radio frequency applications. Small signal measurements on the nonconducting device, i.e. biased in off-state, are manipulated analytically in one single extraction step. The parasitic series resistances and inductances and the device intrinsic capacitances at varying biasing voltages are obtained.

[1]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[2]  N. Camilleri,et al.  Extracting small-signal model parameters of silicon MOSFET transistors , 1994, 1994 IEEE MTT-S International Microwave Symposium Digest (Cat. No.94CH3389-4).