论文信息 - Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

Properties of high-temperature off-state currents in SOI MOSFETs derived from the diffusion mechanism

In this paper, off-state leakage currents in long-channel SOI MOSFETs are investigated by simulation and measurements in the range 50-320/spl deg/C. The general trends of high-temperature off-state currents are interpreted in terms of the diffusion mechanism. The back-gate biasing and silicon film thinning effects are considered. Both single- and double-gate operation cases are analyzed.

Jean-Pierre Colinge | Tamara Rudenko | V. S. Lysenko | Valeria Kilchytska | A. N. Rudenko

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