论文信息 - High temperature stability of nitride-based power HEMTs

High temperature stability of nitride-based power HEMTs

The temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. Failure is thought to be contact metallization related, indicating an extremely robust InAlN/GaN heterostructure.

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