论文信息 - Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures - 字舞流文

Influence of dislocation and ionized impurity scattering on the electron mobility in GaN/AlGaN heterostructures

W. Knap | J. Łusakowski | C. Skierbiszewski | I. Grzegory | S. Porowski | M. Siekacz | K. Dybko