Can molecular resonant tunneling diodes be used for local refresh of DRAM memory cells
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[1] M. Jamal Deen,et al. New RTD large-signal DC model suitable for PSPICE , 1995, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[2] J.P.A. van der Wagt,et al. Tunneling-based SRAM , 1999, Proc. IEEE.
[3] Kang L. Wang,et al. Tunnel diodes fabricated from CdSe nanocrystal monolayers , 1999 .
[4] Hung Chang Lin,et al. Multivalued SRAM cell using resonant tunneling diodes , 1992 .
[5] Theodore S. Moise,et al. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter , 1998 .
[6] A. Seabaugh,et al. RTD/HFET low standby power SRAM gain cell , 1996, International Electron Devices Meeting. Technical Digest.
[7] Chen,et al. Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device. , 1999, Science.
[8] J. H. Comfort. DRAM technology: outlook and challenges , 1999, ICVC '99. 6th International Conference on VLSI and CAD (Cat. No.99EX361).
[9] J. Tour,et al. Rapid Solution and Solid Phase Syntheses of Oligo(1,4-phenylene ethynylene)s with Thioester Termini: Molecular Scale Wires with Alligator Clips. Derivation of Iterative Reaction Efficiencies on a Polymer Support , 1997 .
[10] M. Reed. Molecular-scale electronics , 1999, Proc. IEEE.
[11] Koichi Maezawa,et al. Analysis of Switching Time of Monostable-Bistable Transition Logic Elements Based on Simple Model Calculation , 1995 .
[12] J. P. Sage,et al. A new RTD-FET logic family , 1999, Proc. IEEE.
[13] Gerhard Klimeck,et al. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes , 1998 .
[14] Peter M. Asbeck,et al. Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications , 1993 .
[15] H.J. De Los Santos,et al. Physics-based RTD current-voltage equation , 1996, IEEE Electron Device Letters.