Bias Temperature Instability Depending on Body Bias through Buried Oxide (BOX) Layer in a 65 nm Fully-Depleted Silicon-On-Insulator Process

Bias temperature instability (BTI) depending on body bias through the buried oxide (BOX) layer was measured using ring oscillators at nominal gate-source voltage. BTI through the BOX layer becomes dominant on OFF-state transistors by applying reverse body bias (RBB) even at nominal gate-source voltage. BTI-induced degradation is accelerated by RBB, which is opposite to previous results at which only ON-state transistors were measured. The degradation rate at 1.0 V RBB is more than 5x larger than that in zero body bias.

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