论文信息 - Pit formation in GaInN quantum wells

Pit formation in GaInN quantum wells

The formation of pits in GaInN quantum wells (QWs) has been studied by atomic force microscopy and transmission electron microscopy. It is found that the pits have a hexahedron cone morphology with six sidewalls on 〈1101〉 planes and dislocations connected to their vertexes. The dislocations may induce the formation of pits during the growth of GaInN QWs.

[1] Z. Liliental-Weber,et al. Formation Mechanism of Nanotubes in GaN , 1997 .

[2] H. Amano,et al. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer , 1986 .

[3] R. C. Clarke,et al. Large diameter 6H-SiC for microwave device applications , 1994 .

[4] Takashi Mukai,et al. Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes , 1995 .

[5] P. Vennégués,et al. Study of open-core dislocations in GaN films on (0001) sapphire , 1997 .

[6] M. Skowronski,et al. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy , 1995 .

[7] S. Nakamura,et al. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures , 1995 .

[8] D. Welch,et al. Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers , 1994 .

[9] F. Frank. Capillary equilibria of dislocated crystals , 1951 .