Description of arsenic and boron profiles implanted in SiO2, Si3N4 and Si using Pearson distributions with four moments

Abstract Range profiles of boron and arsenic in silicon, SiO 2 , Si 3 N 4 , and SiO 2 and Si 3 N 4 , respectively, have been determined using the 10 B(n, α) 7 Li nuclear reaction and activation analysis. All profiles are well described by Pearson-IV distributions with four moments.