On a dual inductively coupled plasma for direct and remote plasma in a reactor

A dual inductively coupled plasma (ICP) system in which a remote ICP (upper ICP) with small volume is attached to a main ICP (lower ICP) is developed. Two ICP antennas are connected in parallel and a variable capacitor Cvar is installed in series at the end of the main ICP antenna. By adjusting the capacitance of the variable capacitor, the plasma densities and the electron temperatures in the remote region and the main region are controlled. The electron energy distribution functions (EEDFs) and plasma potential from the EEDFs are measured along z axis. It is found that there is a potential dip in the midway of two ICP antennas and the potential dip is formed to keep two plasmas quasineutral. In two regions, the EEDFs in high energy range are almost same (nonlocal) but they are different in low energy range because low energy electrons cannot overcome the potential dip.

[1]  S. S. Kim,et al.  Experimental measurement of the electron energy distribution function in the radio frequency electron cyclotron resonance inductive discharge. , 2004, Physical review. E, Statistical, nonlinear, and soft matter physics.

[2]  Hyungjun Kim,et al.  Atomic layer deposition of metal and nitride thin films: Current research efforts and applications for semiconductor device processing , 2003 .

[3]  P. Chabert Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms , 2001 .

[4]  Hong-young Chang,et al.  Electron energy distribution function and plasma potential in a planar inductive argon discharge without electrostatic screen , 1999 .

[5]  S. S. Kim,et al.  Electron temperature control with grid bias in inductively coupled argon plasma , 1999 .

[6]  Hong-young Chang,et al.  On the heating mode transition in high-frequency inductively coupled argon discharge , 1999 .

[7]  V. Godyak,et al.  EXPERIMENTAL SETUP AND ELECTRICAL CHARACTERISTICS OF AN INDUCTIVELY COUPLED PLASMA , 1999 .

[8]  M. Turner,et al.  Hysteresis in the E- to H-mode transition in a planar coil, inductively coupled rf argon discharge , 1998 .

[9]  S. M. Hwang,et al.  A theoretical formula of E-H discharge transition power in a transformer-coupled discharge , 1998 .

[10]  V. Godyak,et al.  Electromagnetic field structure in a weakly collisional inductively coupled plasma , 1997 .

[11]  S. Rhee,et al.  Remote plasma enhanced chemical vapor deposition of silicon films at low temperatures from Si{sub 2}H{sub 6}-H{sub 2}SiF{sub 4} , 1996 .

[12]  Uwe R. Kortshagen,et al.  On the E - H mode transition in RF inductive discharges , 1996 .

[13]  N. Hershkowitz,et al.  Symmetric rate model for fluorocarbon plasma etching of SiO2 , 1996 .

[14]  J. Palop,et al.  A new smoothing method for obtaining the electron energy distribution function in plasmas by the numerical differentiation of the I‐V probe characteristic , 1995 .

[15]  Kolobov,et al.  Electron distribution function in a low-pressure inductively coupled plasma. , 1995, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[16]  A. Lichtenberg,et al.  Principles of Plasma Discharges and Materials Processing , 1994 .

[17]  S. Iizuka,et al.  Electron‐temperature control for plasmas passing through a negatively biased grid , 1994 .

[18]  Kortshagen Experimental evidence on the nonlocality of the electron distribution function. , 1994, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics.

[19]  James W. Taylor,et al.  Etching rate characterization of SiO2 and Si using ion energy flux and atomic fluorine density in a CF4/O2/Ar electron cyclotron resonance plasma , 1993 .

[20]  S. Banerjee,et al.  Room‐temperature measurements of strong electroabsorption effect in GexSi1−x/Si multiple quantum wells grown by remote plasma‐enhanced chemical vapor deposition , 1993 .

[21]  Benjamin Alexandrovich,et al.  A simple analysis of an inductive RF discharge , 1992 .

[22]  Jeffrey Hopwood,et al.  Review of inductively coupled plasmas for plasma processing , 1992 .

[23]  Y. H. Lee,et al.  Silicon etching mechanism and anisotropy in CF4+O2 plasma , 1983 .

[24]  H. F. Winters,et al.  Plasma etching—A discussion of mechanisms , 1979 .