论文信息 - Elimination of notching phenomenon which occurs while performing deep silicon etching and stopping on an insulating layer

Elimination of notching phenomenon which occurs while performing deep silicon etching and stopping on an insulating layer

The notching phenomenon has been observed during high aspect ratio silicon etching while performing an etch stop on a dielectric layer. It is generally considered as a critical issue in the fabrication of MEMS structures on SOI substrates. This article reports a novel solution for the elimination of the notching while using conventional non-pulsed RF substrate biasing.

[1] A. Liu,et al. A novel drie fabrication process development for SOI-based MEMS devices , 2003, Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS 2003..

[2] K. Giapis,et al. On the origin of the notching effect during etching in uniform high density plasmas , 1997 .

[3] F. Laermer,et al. Challenges, developments and applications of silicon deep reactive ion etching , 2003 .