Temperature dependence of the infrared optical constants of germanium films
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Huasong Liu | Yiqin Ji | Yugang Jiang | Dandan Liu | Kewen Zhuang | Chenghui Jiang | Jian Leng | J. Leng | Yugang Jiang | Yanmin Zhang | Zhihong Zhao | Yi-qin Ji | Hua-song Liu | Dan-dan Liu | Chenghui Jiang | Yanmin Zhang | Zhihong Zhao | Kewen Zhuang
[1] S. Ray,et al. Luminescence characteristics of Ge nanocrystals embedded in SiO2 matrix , 2005 .
[2] M. Mehmood,et al. Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films , 2010 .
[3] S. Chua,et al. Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix , 2004 .
[4] P. P. Ong,et al. Preparation and photoluminescence of thin films of Ge nanoparticles embedded in Al2O3 matrices , 2001 .
[5] K. S. Sangunni,et al. Temperature dependent optical constants of amorphous Ge2Sb2Te5 thin films , 2010 .
[6] A. Winnacker,et al. Determination of charge carrier concentration in n- and p-doped SiC based on optical absorption measurements , 2002 .
[7] C. Hwangbo,et al. Optical and structural properties of Fe2O3 thin films prepared by ion-beam assisted deposition , 2009 .
[8] A. K. Tyagi,et al. Temperature evolution of optical constants and their tuning in silver , 2013 .
[9] Zhenhong He,et al. Crystallization and oxidation process of nc-Ge in a-SiO2 matrix from a-Si:H/a-Ge:H multilayers , 2000 .
[10] A. Qasrawi. Temperature dependence of the direct allowed transitions band gap and optical constants of polycrystalline α-In2Se3 thin films , 2006 .
[11] E. Palik. Handbook of Optical Constants of Solids , 1997 .
[12] M. Auslender,et al. Theoretical dependence of infrared absorption in bulk-doped silicon on carrier concentration. , 1993, Applied Optics.
[13] Q. Wan,et al. Structural and electrical characteristics of Ge nanoclusters embedded in Al2O3 gate dielectric , 2003 .