论文信息 - In situ X-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K - 字舞流文

In situ X-ray diffraction study of silicon at pressures up to 15.5 GPa and temperatures up to 1073 K

C. Pantea | Liping Wang | Yusheng Zhao | T. W. Żerda | G. Voronin