论文信息 - Role of surface migration in growth of Si films on Si substrate and on oxide layer - 字舞流文

Role of surface migration in growth of Si films on Si substrate and on oxide layer

M. Samokhvalov | S. Tajibaeva | E. Levshin

[1] G. Booker,et al. A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour , 1967 .