论文信息 - Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures

Self-Induced Voltage Oscillations during Anodic Etching of n-InP and Possible Applications for Three-Dimensional Microstructures

Voltage oscillations were observed during anodic etching of 100 -oriented n-InP substrates in an aqueous solution of HCl at high constant current density. Under certain conditions, the oscillations lead to a synchronous modulation of the diameters of pores on large areas of the samples which indicates a correlation between the phases of the oscillations in the pores. These self-induced diameter oscillations may be useful for three-dimensional microstructuring of n-InP and thus for the design and fabrication of new photonic materials. © 2001 The Electrochemical Society. DOI: 10.1149/1.1370417 All rights reserved.

[1] H. Föll,et al. Current transient analysis of the oxidizing process in the complete anodic regime of the Si–HF system , 2000 .

[2] H. Föll,et al. A Model for Current‐Voltage Oscillations at the Silicon Electrode and Comparison with Experimental Results , 1999 .

[3] V. Parkhutik. Kinetics, composition and mechanism of anodic oxide growth on silicon in water-containing electrolytes , 1991 .

[4] F. Ozanam,et al. A Theory for the Resonant Response of an Electrochemical System: Self‐Oscillating Domains, Hidden Oscillation, and Synchronization Impedance , 1992 .

[5] Kurt Busch,et al. Macroporous silicon with a complete two‐dimensional photonic band gap centered at 5 μm , 1996 .

[6] J. A. Liddle,et al. Crystallographic aspects of pore formation in gallium arsenide and silicon , 1997 .

[7] E. Yablonovitch. How to Be Truly Photonic , 2000, Science.

[8] L. Canham. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers , 1990 .

[9] V. Lehmann,et al. On the Origin of Electrochemical Oscillations at Silicon Electrodes , 1996 .

[10] H. Föll,et al. Pore formation mechanisms for the Si-HF system , 2000 .

[11] H. Föll,et al. A model for current oscillations in the Si-HF system based on a quantitative analysis of current transients , 1998 .