48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth

High-performance normal-incidence p-i-n Ge photodetectors for 1550 and 1310 nm were grown by selective epitaxial growth on SOI substrate with <italic>in situ</italic> thermal annealing and surface Si passivation. Bulk leakage current density and surface leakage density as low as 3.4 mA/cm<sup>2</sup> and 0.4 μA/cm are achieved under –1 V, respectively. Resonance optical responsivity at 1550 and 1310 nm are 0.27 and 0.59 A/W under zero-bias, respectively. A 3-dB bandwidth as high as 48 GHz is obtained at –3 V. Clear open eye diagrams at 40 Gbps are demonstrated under zero-bias at 1550 nm.

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