论文信息 - The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions - 字舞流文

The quantitative analysis of silicon carbide surface smoothing by Ar and Xe cluster ions

A. E. Ieshkin | A. Trifonov | A. Garshev | V. Chernysh | V. Krupenin | D. Presnov | Y. Ermakov | D. Kireev | Y. Anufriev | I. G. Prokhorova