1/f noise in the linear region of LDD MOSFETs

A lightly doped drain (LDD) MOSFET can be decomposed as an intrinsic MOSFET in series with n/sup -/ source and drain regions. Under the assumption that the 1/f noise mainly comes from the intrinsic MOSFET part of the device, an expression for the drain noise power spectrum was developed in terms of terminal voltages. Noise measurements were performed on n-channel devices with effective channel lengths varying from 0.87 to 11.37 mu m. Good agreement between experimental values and theoretical values for a device channel length shorter than 4 mu m was obtained. It was also found that the LDD device has less noise than a conventional-structured MOSFET with the same channel length and operated under same terminal voltages. >

[1]  J.Y.-C. Sun,et al.  An analytical one-dimensional model for lightly doped drain (LDD) MOSFET devices , 1985, IEEE Transactions on Electron Devices.

[2]  R.H. Dennard,et al.  1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints , 1979, IEEE Journal of Solid-State Circuits.

[3]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[4]  E. Takeda,et al.  Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's , 1983, IEEE Electron Device Letters.

[5]  D. L. Critchlow,et al.  Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology , 1982 .

[6]  Lightly doped drain transistors for advanced VLSI circuits , 1985, IEEE Transactions on Electron Devices.

[7]  L.K.J. Vandamme,et al.  Model for 1/f; noise in MOS transistors biased in the linear region , 1980 .

[8]  S. Ogura,et al.  Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor , 1980 .

[9]  T. Hsiang,et al.  Study of 1/f noise in N-MOSFET's: Linear region , 1985, IEEE Transactions on Electron Devices.

[10]  J. R. Cricchi,et al.  Characterization of thin-oxide MNOS memory transistors , 1972 .

[11]  F. Hooge Discussion of recent experiments on 1/ƒ noise , 1972 .

[12]  C.H. Suh Carrier number fluctuation model of 1/f noise in a semiconductor device , 1987, IEEE Transactions on Electron Devices.

[13]  Shojiro Asai,et al.  New hot-carrier injection and device degradation in submicron MOSFETs , 1983 .

[14]  C. Hu,et al.  Hot-electron induced excess carriers in MOSFET's , 1982, IEEE Electron Device Letters.