High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

We demonstrate dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current ...

[1]  E. M. Vogel,et al.  Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide , 2014, 72nd Device Research Conference.

[2]  Faisal Ahmed,et al.  Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides. , 2017, ACS nano.

[3]  A. Sedra.  Microelectronic circuits , 1982 .

[4]  Qing Hua Wang,et al.  Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. , 2012, Nature nanotechnology.

[5]  P. Jeon,et al.  MoS2 nanosheets for top-gate nonvolatile memory transistor channel. , 2012, Small.

[6]  Andre K. Geim,et al.  Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.

[7]  C. Schönenberger,et al.  Nernst limit in dual-gated Si-nanowire FET sensors. , 2010, Nano letters.

[8]  David A. Muller,et al.  Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures , 2017, Nature.

[9]  B. Hoefflinger.  ITRS: The International Technology Roadmap for Semiconductors , 2011 .

[10]  Thomas Heine,et al.  Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.

[11]  Richard Veras,et al.  RAIDR: Retention-aware intelligent DRAM refresh , 2012, 2012 39th Annual International Symposium on Computer Architecture (ISCA).

[12]  M. Dresselhaus,et al.  15-nm channel length MoS2 FETs with single- and double-gate structures , 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

[13]  J. Kong,et al.  Integrated Circuits Based on Bilayer MoS , 2012 .

[14]  Andras Kis,et al.  Ultrasensitive photodetectors based on monolayer MoS2. , 2013, Nature nanotechnology.

[15]  Kinam Kim,et al.  High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals , 2012, Nature Communications.

[16]  Hao Wu,et al.  Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics , 2014, Nature Communications.

[17]  J. Appenzeller,et al.  High performance multilayer MoS2 transistors with scandium contacts. , 2013, Nano letters.

[18]  Sherif M. Sharroush,et al.  Time-Domain Readout of 1T-1C DRAM Cells , 2018, J. Circuits Syst. Comput..

[19]  Jongho Lee,et al.  25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets. , 2013, ACS Nano.

[20]  Robert M. Wallace,et al.  Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics , 2018, Applied Physics Letters.

[21]  Michael S. Fuhrer,et al.  High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects , 2012, 1212.6292.

[22]  C. Hu,et al.  FinFET-a self-aligned double-gate MOSFET scalable to 20 nm , 2000 .

[23]  Bin Yu,et al.  FinFET scaling to 10 nm gate length , 2002, Digest. International Electron Devices Meeting,.

[24]  Navakanta Bhat,et al.  A sub-thermionic MoS2 FET with tunable transport , 2017 .

[25]  Peng Zhou,et al.  Wafer-scale transferred multilayer MoS2 for high performance field effect transistors , 2019, Nanotechnology.

[26]  J. Shan,et al.  Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.

[27]  P. D. Ye,et al.  $\hbox{MoS}_{2}$ Dual-Gate MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Top-Gate Dielectric , 2011, IEEE Electron Device Letters.

[28]  S. Min,et al.  MoS₂ nanosheet phototransistors with thickness-modulated optical energy gap. , 2012, Nano letters.

[29]  Giuseppe Iannaccone,et al.  Electronics based on two-dimensional materials. , 2014, Nature nanotechnology.

[30]  A. Radenović,et al.  Single-layer MoS2 transistors. , 2011, Nature nanotechnology.

[31]  Chunsen Liu,et al.  Small footprint transistor architecture for photoswitching logic and in situ memory , 2019, Nature Nanotechnology.

[32]  Jing Kong,et al.  Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. , 2014, Nature communications.

[33]  A. Kis,et al.  Nonvolatile memory cells based on MoS2/graphene heterostructures. , 2013, ACS nano.

[34]  Robert F. Pierret,et al.  Semiconductor device fundamentals , 1996 .

[35]  Mengwei Si,et al.  Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films. , 2013, Nano letters.

[36]  S. Koester,et al.  Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents. , 2016, ACS nano.