An implanted-emitter 4H-SiC bipolar transistor with high current gain

An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl sim/40, the highest current gain reported for BJT in any polytype of SiC has been experimentally demonstrated in 4H-SiC. The forward drop was /spl sim/1 V at forward current density of 50 A/cm/sup 2/. The current gain decreases hence specific on-resistance increases with increasing temperature. The negative temperature coefficient of /spl beta/ makes the device attractive for paralleling and for preventing thermal runaways.

[1]  T. Chow,et al.  Characterization of phosphorus implantation in 4H-SiC , 1999 .

[2]  P. Friedrichs,et al.  Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype , 1999, IEEE Electron Device Letters.

[3]  A. Agarwal,et al.  1800 V, 3.8 A bipolar junction transistors in 4H-SiC , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

[4]  SiC and GaN High-Voltage Power Switching Devices , 2000 .