论文信息 - Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE - 字舞流文

Laser-surface diagnostics of GaAs growth processes II. Reflectance anisotropy studies of GaAs growth by MBE

B. Joyce | J. Neave | S. Armstrong | M. Pemble | Jing Zhang | A. Taylor | D. Klug

[1] L. Samuelson,et al. Reflectance-difference study of surface chemistry in MOVPE growth , 1991 .

[2] L. Samuelson,et al. In situ control of the growing surface in high vacuum MOVPE of GaAs , 1991 .

[3] A. A. Studna,et al. In situ monitoring of crystal growth by reflectance difference spectroscopy , 1991 .

[4] Y. Horikoshi,et al. Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs , 1990 .

[5] D. Aspnes. Reflectance-difference spectroscopy: a new probe of crystal growth by MBE and OMCVD , 1989 .

[6] A. A. Studna,et al. Optical studies of molecular‐beam epitaxy growth of GaAs and AlAs , 1988 .

[7] J. P. Harbison,et al. Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy , 1988 .

[8] A. A. Studna,et al. Optical reflectance measurements of transients during molecular‐beam epitaxial growth on (001) GaAs , 1988 .

[9] D. Chadi,et al. Atomic structure of GaAs(100)‐(2×1) and (2×4) reconstructed surfaces , 1987 .

[10] A. A. Studna,et al. Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs , 1987 .

[11] B. Joyce,et al. GaAs(001)- c (44): A chemisorbed structure , 1983 .

[12] K. Jacobi,et al. Composition and structure of differently prepared GaAs(100) surfaces studied by LEED and AES , 1978 .