Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-
暂无分享,去创建一个
C. H. Lee | K. Nagashio | A. Toriumi | K. Kita | S. K. Wang | M. Yoshida | T. Nishimura
[1] Abe,et al. Nature and origin of the 5-eV band in SiO2:GeO2 glasses. , 1992, Physical review. B, Condensed matter.
[2] G. Pourtois,et al. Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2 , 2008 .
[3] Mitsuru Takenaka,et al. Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation , 2008 .
[4] Tomonori Nishimura,et al. Direct Evidence of GeO Volatilization from GeO2/Ge and Impact of Its Suppression on GeO2/Ge Metal–Insulator–Semiconductor Characteristics , 2008 .
[5] Akira Toriumi,et al. Origin of electric dipoles formed at high-k/SiO2 interface , 2009 .
[6] Thermodynamics and Kinetics for Suppression of GeO Desorption by High Pressure Oxidation of Ge , 2009 .
[7] Tomonori Nishimura,et al. Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics , 2009 .
[8] Heiji Watanabe,et al. Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices , 2009 .