Fabrication of anti-reflection coating TiO2-SiO2 on silicon substrate with pulsed laser deposition method

Anti reflection coating (ARC) is used in solar cell that functions to increase the quantity of light absorption. To obtain maximum results would require a good combination between ARC’s materials and the synthesis technique. TiO2-SiO2 was used as ARC materials because it has good passivity and high refractive index value. Pulsed Laser Deposition (PLD) method was used for synthesis technique because it has high photon energy and high temperature. Characterization are done by using Field Effect Scanning Electron Microscope (FESEM), X-Ray Diffraction (XRD), and Ultraviolet-Visible (UV-Vis) Spectrophotometry. The best result, anti reflection coating TiO2-SiO2 successfully reduced the reflection value from 35.69% to 14.11% for silicon substrate. It was gained with the properties of laser’s wavelength at 532 nm, laser’s energy at 100 mJ, and deposition time at 20 seconds.