论文信息 - Stimulated Emission, Absorption Spectra, and Recombination in Epitaxial PbTe

Stimulated Emission, Absorption Spectra, and Recombination in Epitaxial PbTe

Stimulated emission at temperatures up to 220 K is detected in epitaxial PbTe layers by means of a Q-switched Nd3+:YAG laser. From an analysis of simultaneous measurements of the absorption edge, the conclusion is drawn that the emission is due to direct interband transitions with k-conservation. A unique quantitative description of generation and radiative recombination at high levels of excitation is given. The role of nonradiative processes is outlined. Russian text ignored.

[1] I. Rechenberg,et al. Interband absorption edge in Pb1−x Snx Te epitaxial layers , 1978 .

[2] K. Herrmann,et al. Recombination in Pb0.83Sn0.17Te at high levels of optical excitation , 1977 .

[3] W. Anderson. Gain-frequency-current relation for Pb 1-x Sn x Te double heterostructure lasers , 1977 .

[4] K. Lischka,et al. Auger recombination in PbTe , 1977 .

[5] K. Herrmann,et al. Recombination analysis in 10 μm Pb1−xSnxTe , 1976 .

[6] A. Shigetomi,et al. Temperature and Magnetic Tuning of Two-Photon Pumped PbTe Laser , 1976 .

[7] P. R. Emtage. Auger recombination and junction resistance in lead‐tin telluride , 1976 .

[8] G. Martínez. Band Inversion in Pb 1-x Sn x Se Alloys under Hydrostatic Pressure. III. Laser Emission , 1973 .

[9] W. Weber,et al. Waveguide and luminescent properties of thin‐film Pb‐salt injection lasers , 1973 .

[10] J. S. Blakemore,et al. Significance of band structure in determining radiative recombination and laser action in the lead salt semiconductors , 1964 .

[11] H. Riedl. Free-Carrier Absorption in p-Type PbTe , 1962 .

[12] A. Calawa. Small bandgap lasers and their uses in spectroscopy , 1973 .