High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers.

The setup of an apparatus for chemical vapor deposition (CVD) of hexagonal boron nitride (h-BN) and its characterization on four-inch wafers in ultra high vacuum (UHV) environment is reported. It provides well-controlled preparation conditions, such as oxygen and argon plasma assisted cleaning and high temperature annealing. In situ characterization of a wafer is accomplished with target current spectroscopy. A piezo motor driven x-y stage allows measurements with a step size of 1 nm on the complete wafer. To benchmark the system performance, we investigated the growth of single layer h-BN on epitaxial Rh(111) thin films. A thorough analysis of the wafer was performed after cutting in atmosphere by low energy electron diffraction, scanning tunneling microscopy, and ultraviolet and X-ray photoelectron spectroscopies. The apparatus is located in a clean room environment and delivers high quality single layers of h-BN and thus grants access to large area UHV processed surfaces, which had been hitherto restricted to expensive, small area single crystal substrates. The facility is versatile enough for customization to other UHV-CVD processes, e.g., graphene on four-inch wafers.

[1]  Jun Lou,et al.  Large scale growth and characterization of atomic hexagonal boron nitride layers. , 2010, Nano letters.

[2]  N. Mårtensson,et al.  Monolayer of h-BN chemisorbed on Cu(111) and Ni(111): The role of the transition metal 3d states , 2005 .

[3]  S. Banerjee,et al.  Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils , 2009, Science.

[4]  S. Gsell,et al.  Scalable synthesis of graphene on single crystal Ir(111) films , 2012 .

[5]  Peter Blaha,et al.  Surface Trapping of Atoms and Molecules with Dipole Rings , 2008, Science.

[6]  W. Auwärter,et al.  Boron Nitride Nanomesh , 2004, Science.

[7]  E. Sutter,et al.  Interface formation in monolayer graphene-boron nitride heterostructures. , 2012, Nano letters.

[8]  J. Robinson,et al.  Substrate considerations for graphene synthesis on thin copper films , 2012, Nanotechnology.

[9]  S. Gsell,et al.  Epitaxial films of metals from the platinum group (Ir, Rh, Pt and Ru) on YSZ-buffered Si(1 1 1) , 2009 .

[10]  H. Michaelson.  The work function of the elements and its periodicity , 1977 .

[11]  T. Taniguchi,et al.  Boron nitride substrates for high mobility chemical vapor deposited graphene , 2011, 1105.4938.

[12]  L. T. Chadderton,et al.  Total current spectroscopy , 1979 .

[13]  Takashi Taniguchi,et al.  Far-ultraviolet plane-emission handheld device based on hexagonal boron nitride , 2009 .

[14]  E. Wetli,et al.  A photoelectron spectrometer for k-space mapping above the Fermi level , 1997 .

[15]  S. Gsell,et al.  Epitaxial growth of graphene on transition metal surfaces: chemical vapor deposition versus liquid phase deposition , 2012, Journal of physics. Condensed matter : an Institute of Physics journal.