论文信息 - Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes - 字舞流文

Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes

Ashutosh Kumar | T. Sekiguchi | Jun Chen | S. Ito | T. Ohkubo | W. Yi | M. Edo | S. Takashima | R. Tanaka | Akio Iwanade | T. Kimura