论文信息 - Impact of plasma-charging damage polarity on MOSFET noise

Impact of plasma-charging damage polarity on MOSFET noise

Plasma-charging damage is known to be a high-field injection phenomenon during plasma processing. It is also known that it can happen in either the gate-injection mode or substrate-injection mode, depending on the plasma potential distribution. However, the effect of this polarity difference on damage is seldom addressed. A number of groups have studied the impact of plasma-charging damage on low frequency MOSFET noise. The consensus is that plasma charging damage increases the low frequency noise of a MOSFET. However, in this work, we observed a strong dependence of the MOSFET low frequency noise on the polarity of plasma-charging damage. When the plasma-charging damage is of the gate-injection type, the MOSFET low frequency noise is insensitive to damage whereas when the polarity is of the substrate-injection type, the MOSFET low frequency noise is very sensitive to damage.

[1] K.P. Cheung. An efficient method for plasma-charging damage measurement , 1994, IEEE Electron Device Letters.

[2] C. Hu,et al. Effects of plasma charging damage on the noise performance of thin-oxide MOSFET's , 1994, IEEE Electron Device Letters.

[3] K. Cheung,et al. Plasma‐charging damage: A physical model , 1994 .

[4] B. Bandyopadhyay,et al. A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection , 1995, IEEE Electron Device Letters.