Room-temperature InAsSb photovoltaic detectors for mid-infrared applications

Novel noncryogenic InAsSb photovoltaic detectors grown by molecular beam epitaxy are proposed and demonstrated. The quaternary alloy In<sub>0.88</sub>Al<sub>0.12</sub>As<sub>0.80</sub>Sb<sub>0.20 </sub> is introduced as a wide bandgap barrier layer lattice matched to the GaSb substrate. The valence band edge of In<sub>0.88</sub>Al<sub>0.12</sub>As<sub>0.80</sub>Sb<sub>0.20</sub> nearly matches with InAs<sub>0.91</sub>Sb<sub>0.09</sub>, leading to more efficient transport of photogenerated holes. The resulting mid-infrared photovoltaic detector exhibits a 50% cutoff wavelength of 4.31 mum and a peak responsivity of 0.84 A/W at room temperature. High Johnson-noise-limited detectivity (D<sup>*</sup>) of 2.6times10<sup>9 </sup> cmmiddotHz<sup>1/2</sup>/W at 4.0 mum, and 4.2times10<sup>10</sup> cmmiddotHz<sup>1/2</sup>/W at 3.7 mum are achieved at 300 K and 230 K, respectively

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