Epitaxial growth of skutterudite (CoSb_3) thin films on (001) InSb by pulsed laser deposition

Heteroepitaxial growth of the cubic skutterudite phase CoSb 3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb 3 target with 0.75 at.% excess Sb. An InSb ( a 0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb 3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001) CoSb 3 ∥ (001) InSb ; [100] CoSb 3 ∥ [110] InSb .

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