Monolithic material fabrication by chemical vapour deposition

The subatmospheric pressure chemical vapour deposition (CVD) process has been used to fabricate theoretically dense, highly pure, void free and large area infrared-optical and ceramic materials such as ZnS, ZnSe, CdS, CdZnTe, Si and SiC. In this paper, an overview of a large scale CVD process is presented emphasizing the important technical and engineering issues such as control of material properties, injector heating and its effect on growth, selection of an appropriate mandrel material, grain growth, material bowing, nodular growth, and storage, transport and scrubbing of a large quantity of hazardous chemicals. Further, the flow pattern in our CVD reactors is described and its importance in achieving good control over thickness and composition uniformity over large areas is discussed.

[1]  D. L. Barton,et al.  Vacuum‐evaporated conducting ZnS films , 1979 .

[2]  V. M. Donnelly,et al.  Excimer laser‐induced deposition of InP: Crystallographic and mechanistic studies , 1985 .

[3]  T. Hirai,et al.  Preparation and some properties of chemically vapour-deposited Si3N4-TiN composite , 1982 .

[4]  W. J. Lackey,et al.  Ceramic coatings for advanced heat engines - A review and projection , 1987 .

[5]  W. M. Yim,et al.  Vapor‐Phase Epitaxial Growth and Some Properties of ZnSe , ZnS , and CdS , 1972 .

[6]  M. Balog,et al.  The chemical vapour deposition and characterization of ZrO2 films from organometallic compounds , 1977 .

[7]  J. Tsao,et al.  Patterned photonucleation of chemical vapor deposition of Al by UV‐laser photodeposition , 1984 .

[8]  T. Hirai,et al.  Microstructure of Si3N4-TiN composites prepared by chemical-vapour deposition , 1982 .

[9]  Raymond L. Taylor,et al.  Epitaxial Growth Of CVD CdZnTe As Substrate For HgCdTe Detectors , 1986, Other Conferences.

[10]  F. Houle,et al.  Laser chemical vapor deposition of copper , 1985 .

[11]  R. A. Tanzilli,et al.  Optical Properties Of Chemical Vapor Deposition (CVD) Silicon Nitride , 1982, Optics & Photonics.

[12]  D. Rathman,et al.  Comparison of laser‐initiated and thermal chemical vapor deposition of tungsten films , 1984 .

[13]  P. Wright,et al.  The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressure , 1982 .

[14]  W. A. Bryant,et al.  The fundamentals of chemical vapour deposition , 1977 .

[15]  W. J. Lackey,et al.  Fabrication of ceramic-ceramic composites by chemical vapor deposition. [SiC-TiSi] , 2008 .

[16]  G. R. Srinivasan,et al.  Recent advances in silicon epitaxy and its application to high performance integrated circuits , 1984 .

[17]  M. Ludowise.  Metalorganic chemical vapor deposition of III‐V semiconductors , 1985 .

[18]  H. M. Pollock,et al.  Growth of Polycrystalline Silicon Films: Grain Size , 1973 .

[19]  P. J. Dean,et al.  Manganese doping of ZnS and ZnSe epitaxial layers grown by organometallic chemical vapour deposition , 1982 .

[20]  P. Kruse.  Chapter 1 The Emergence of Hg1-xCdxTe as a Modern Infrared Sensitive Material , 1981 .

[21]  G. W. Cullen,et al.  Reduced pressure silicon epitaxy; A review , 1984 .

[22]  Richard E. Engdahl.  Chemical Vapor Deposited (CVD) Silicon Carbide Mirror Technology , 1982, Other Conferences.

[23]  B. Wessels,et al.  High-conductivity heteroepitaxial ZnSe films , 1980 .

[24]  S. Hersee,et al.  LOW-PRESSURE CHEMICAL VAPOR DEPOSITION , 1982 .

[25]  J. Saraie,et al.  Chemical Vapor Deposition of Al2 O 3 Thin Films under Reduced Pressures , 1985 .

[26]  T. Hirai,et al.  Synthesis and structure of chemically vapour-deposited boron nitride , 1986 .

[27]  H. Debolt.  Boron and other High-Strength, High-Modulus, Low-Density Filamentary Reinforcing Agents , 1982 .

[28]  T. H. Baum,et al.  Laser chemical vapor deposition of gold , 1985 .