论文信息 - Optical and electronic properties of doped silicon from 0.1 to 2 THz

Optical and electronic properties of doped silicon from 0.1 to 2 THz

Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N‐ and P‐type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency‐dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.

Daniel R. Grischkowsky | D. Grischkowsky | M. Exter | Martin P. van Exter | M. V. Exter

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