Theory of extrinsic and intrinsic heterojunctions in thermal equilibrium

[1]  M. J. Adams,et al.  A proposal for a new approach to heterojunction theory , 1979 .

[2]  O. Roos.  Quantum statistical theory of semiconductor junctions in thermal equilibrium , 1977 .

[3]  W. Frensley,et al.  Theory of the energy-band lineup at an abrupt semiconductor heterojunction , 1977 .

[4]  S. Louie,et al.  Ge-GaAs (110) Interface: A Self-Consistent Calculation of Interface States and Electronic Structure , 1977 .

[5]  D. Hamann,et al.  Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface , 1977 .

[6]  H. Kroemer.  Problems in the theory of heterojunction discontinuities , 1975 .

[7]  W. Wiegmann,et al.  Quantum States of Confined Carriers in Very Thin AlxGa1-x As-GaAs-AlxGa1-xAs Heterostructures , 1974 .

[8]  D. R. Hamann,et al.  Self-Consistent Electronic Structure of Solid Surfaces , 1972 .

[9]  T. Tansley.  Heterojunction Boundary Conditions , 1966 .

[10]  L. L. Chang.  Comments on the Junction Boundary Conditions for Heterojunctions , 1966 .

[11]  O. Roos.  Derivation of Boundary Conditions in Electromagnetic Theory , 1966 .

[12]  Y. F. Chang.  Junction Boundary Conditions for Heterojunctions , 1965 .

[13]  R.L. Anderson,et al.  Experiments on Ge-GaAs heterojunctions , 1962, IRE Transactions on Electron Devices.

[14]  J. C. Slater.  Electrons in perturbed periodic lattices , 1949 .

[15]  D. Greenberger.  Some Remarks on the Extended Galilean Transformation. , 1979 .

[16]  W. Pickett,et al.  Theoretical study of relaxation at the (110) Ge-GaAs interface , 1978 .

[17]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[18]  A. S. Grove.  Physics and Technology of Semiconductor Devices , 1967 .

[19]  V. Bargmann,et al.  On Unitary ray representations of continuous groups , 1954 .