A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: RON * QG of 2.5 Ω·nC is obtained at VDS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.

[1]  Won-suk Choi,et al.  Effectiveness of a SiC schottky diode for Super-Junction MOSFETs on continuous conduction mode PFC , 2010, SPEEDAM 2010.

[2]  Johan Driesen,et al.  A hard switching VIENNA boost converter for characterization of AlGaN/GaN/AlGaN power DHFETs , 2010 .

[3]  N. Hara,et al.  Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics , 2010, IEEE Electron Device Letters.

[4]  K. Shinohara,et al.  Normally-off 5A/1100V GaN-on-silicon device for high voltage applications , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[5]  M. Van Hove,et al.  Low leakage high breakdown e-mode GaN DHFET on Si by selective removal of in-situ grown Si3N4 , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[6]  M. Van Hove,et al.  Switching assessment of GaN transistors for power conversion applications , 2009, 2009 13th European Conference on Power Electronics and Applications.

[7]  Michael Heuken,et al.  Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD , 2009 .

[8]  Gustaaf Borghs,et al.  AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance , 2009 .

[9]  S. Denbaars,et al.  V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation , 2008, IEEE Electron Device Letters.

[10]  S. Heikman,et al.  A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz , 2008, IEEE Electron Device Letters.

[11]  S. Yoshida,et al.  High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[12]  G. Borghs,et al.  AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE , 2008 .

[13]  F. Chimento,et al.  Super-Junction MOSFET and SiC Diode Application for the Efficiency Improvement in a Boost PFC Converter , 2006, IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics.

[14]  Yugang Zhou,et al.  Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode , 2006, IEEE Transactions on Electron Devices.

[15]  Gustaaf Borghs,et al.  Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer , 2005 .