Substrate hot-electron injection EPROM

A new EPROM approach using substrate hot-electron injection is introduced. Electron injection into the substrate is achieved, using positive voltages only, to facilitate the integration of the technique into a memory array. High-injection efficiency of electrons to the floating gate is achieved, enabling 5-V only operation, where the high voltages are generated on chip. Programming speed of 1-V/ms for total collection of 10 µA per bit line is realized. The main disadvantages of this EPROM approach are circuit complexity and cell size.

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