论文信息 - The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer - 字舞流文

The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layer

J. Kwo | M. Hong | W. C. Lee | Chia-Hung Hsu | S. Yang | W. Hsieh | B. Lin | C. Kuo | W.-R. Liu | Y. Li | W. Lee