Gain-dependent polarization properties of vertical-cavity lasers

We show that the partitioning of power into the two orthogonal eigen polarizations of infra-red gain-guided vertical cavity lasers depends upon the relative spectral overlap of the nondegenerate polarization cavity resonances with the laser gain spectrum. Furthermore, at the condition where the polarization resonances and the peak laser gain are aligned, abrupt switching of power between the eigen polarizations is observed as the gain sweeps through the polarization resonances. The gain-dependence of the polarization requires spectral splitting between the eigen polarizations, which is found to be strongly influenced by local strain. The polarization of the fundamental and higher-order spatial modes can be selected and maintained for all InGaAs vertical-cavity lasers in a wafer simply by employing a 20 nm or greater blue-shift offset of the peak laser gain relative to the cavity resonances. >

[1]  Ian H. White,et al.  Enhanced polarisation self-switching in a vertical-cavity surface-emitting laser by gain saturation of transverse modes , 1994 .

[2]  K. Choquette,et al.  Polarization modulation of cruciform vertical-cavity laser diodes , 1994 .

[3]  M. Kondô,et al.  Crystal Orientation Dependence of Impurity Dopant Incorporation in MOVPE-grown III-V Materials , 1992 .

[4]  K. Choquette,et al.  Control of vertical-cavity laser polarization with anisotropic transverse cavity geometries , 1994, IEEE Photonics Technology Letters.

[5]  Kenichi Iga,et al.  A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers , 1994 .

[6]  Mario Dagenais,et al.  High‐frequency polarization self‐modulation in vertical‐cavity surface‐emitting lasers , 1993 .

[7]  Daryoosh Vakhshoori,et al.  Symmetry considerations in vertical‐cavity surface‐emitting lasers: Prediction of removal of polarization isotropicity on (001) substrates , 1994 .

[8]  J. P. Harbison,et al.  Polarisation characteristics of quantum well vertical cavity surface emitting lasers , 1991 .

[9]  Kenichi Iga,et al.  Polarisation control for surface emitting lasers , 1991 .

[10]  Brian Thibeault,et al.  Enhanced performance of offset-gain high-barrier vertical-cavity surface-emitting lasers , 1993 .

[11]  B. M. Arora,et al.  Polarization characteristics of quantum well lasers , 1992, Other Conferences.

[12]  Arturo Chavez-Pirson,et al.  Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium , 1993 .

[13]  Y.H. Lee,et al.  High-speed modulation of vertical-cavity surface-emitting lasers , 1991, IEEE Photonics Technology Letters.

[14]  F. Koyama,et al.  Engineered polarization control of GaAs/AlGaAs surface-emitting lasers by anisotropic stress from elliptical etched substrate hole , 1993, IEEE Photonics Technology Letters.

[15]  K. Choquette,et al.  Temperature dependence of gain‐guided vertical‐cavity surface emitting laser polarization , 1994 .

[16]  K. Choquette,et al.  Vertical cavity surface emitting lasers with 21% efficiency by metalorganic vapor phase epitaxy , 1994, IEEE Photonics Technology Letters.

[17]  B. Tell,et al.  TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS , 1992 .