Ion-Beam-Assisted Deposition and Synthesis
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[1] A. Kalb,et al. Summary Abstract: Neutral ion beam deposition of high reflectance coatings for use in ring laser gyroscopes , 1986 .
[2] J. McNeil,et al. Summary Abstract: Reduction of optical scatter in coated metal surfaces , 1986 .
[3] E. Kay. Summary Abstract: Non‐bulk‐like physical properties of thin films due to ion bombardment during film growth , 1986 .
[4] H. Angus Macleod,et al. Structure‐related optical properties of thin films , 1986 .
[5] Sey-Shing Sun. Internal stress in ion beam sputtered molybdenum films , 1986 .
[6] H. Usui,et al. Low temperature epitaxy by ionized‐cluster beam , 1986 .
[7] J. McNeil,et al. Summary Abstract: Ion‐assisted deposition of Ta2O5 and Al2O3 thin films , 1986 .
[8] J. Cuomo,et al. Control of thin film orientation by glancing angle ion bombardment during growth , 1986 .
[9] D. Smith,et al. Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium, and hafnium , 1986 .
[10] K. Müller. Summary Abstract: Monte Carlo calculation for ion‐assisted thin film deposition , 1986 .
[11] P. Martin,et al. Nucleation and growth studies of gold films prepared by evaporation and ion-assisted deposition , 1986 .
[12] K. Müller. Monte Carlo calculation for structural modifications in ion‐assisted thin film deposition due to thermal spikes , 1986 .
[13] Huang,et al. Optical and electrical properties of thin silver films grown under ion bombardment. , 1986, Physical review. B, Condensed matter.
[14] J. Cuomo,et al. Stress modification of WSi2.2 films by concurrent low energy ion bombardment during alloy evaporation , 1985 .
[15] T. C. Huang,et al. Effect of ion bombardment during deposition on the x‐ray microstructure of thin silver films , 1985 .
[16] T. C. Huang,et al. Interpretation of the nonbulklike optical density of thin copper films grown under ion bombardment. , 1985 .
[17] S. Sie,et al. Properties of CeO2 thin films prepared by oxygen-ion-assisted deposition. , 1985, Applied optics.
[18] J. Cuomo,et al. Synthesis of compound thin films by dual ion beam deposition. II. Properties of aluminum‐nitrogen films , 1985 .
[19] H. Demiryont,et al. Summary Abstract: Ion‐beam sputter deposition of oxide films , 1985 .
[20] D. W. Hoffman,et al. The influence of discharge current on the intrinsic stress in Mo films deposited using cylindrical and planar magnetron sputtering sources , 1985 .
[21] S. Rossnagel,et al. X‐ray photoelectron spectroscopy of ion beam sputter deposited SiO2, TiO2, and Ta2O5 , 1984 .
[22] U. Helmersson,et al. Structure of reactively magnetron sputtered Hf‐N films , 1984 .
[23] Jerome J. Cuomo,et al. Quantitative ion beam process for the deposition of compound thin films , 1983 .
[24] C. Ting,et al. ZrN diffusion barrier in aluminum metallization schemes , 1983 .
[25] R. Voss,et al. Summary Abstract: Cluster formation and the percolation threshold in thin Au films , 1983 .
[26] R. S. Robinson,et al. Impact enhanced surface diffusion during impurity induced sputter cone formation , 1982 .
[27] Harold R. Kaufman,et al. Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology , 1982 .
[28] Scott A. Barnett,et al. Ion surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors , 1982 .
[29] D. Dobrev. Ion-beam-induced texture formation in vacuum-condensed thin metal films☆ , 1982 .
[30] H. Usui,et al. Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formation , 1982 .
[31] Toshinori Takagi,et al. Role of ions in ion-based film formation , 1982 .
[32] C. Ting. TiN formed by evaporation as a diffusion barrier between Al and Si , 1982 .
[33] Y. Ishida,et al. Sputter‐enhanced diffusion phenomena in Cu/Ni alloys at elevated temperatures , 1982 .
[34] D. S. Yee,et al. Modification of niobium film stress by low‐energy ion bombardment during deposition , 1982 .
[35] M. Wittmer. Interfacial reactions between aluminum and transition‐metal nitride and carbide films , 1982 .
[36] D. W. Hoffman,et al. Internal stresses in amorphous silicon films depositied by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H2 , 1981 .
[37] E. Hirsch,et al. Thin film annealing by ion bombardment , 1980 .
[38] M. Wittmer. TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices , 1980 .
[39] S. Nakahara. Microporosity in thin films , 1979 .
[40] J. C. Fan,et al. Preparation of Sn‐doped In2O3 (ITO) films at low deposition temperatures by ion‐beam sputtering , 1979 .
[41] Miko Marinov,et al. Effect of ion bombardment on the initial stages of thin film growth , 1977 .
[42] M. Guseva,et al. Effect of ion irradiation on the formation, structure and properties of thin metal films , 1976 .
[43] G. J. Kominiak,et al. Effect of ion bombardment during deposition on thick metal and ceramic deposits , 1974 .
[44] E. Rudy. The crystal structures of Hf3N2 and Hf4N3 , 1970 .
[45] P. Martin,et al. Ion-based methods for optical thin film deposition , 1986 .
[46] P. Martin,et al. Modification of the optical and structural properties of dielectric ZrO2 films by ion‐assisted deposition , 1984 .
[47] H A Macleod,et al. Ion-beam-assisted deposition of thin films. , 1983, Applied optics.
[48] D. W. Hoffman,et al. Internal stresses in sputtered chromium , 1977 .
[49] F. Smith. Structure and Electrical Properties of Sputtered Films of Hafnium and Hafnium Compounds , 1970 .