Ion-Beam-Assisted Deposition and Synthesis

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[2]  J. McNeil,et al.  Summary Abstract: Reduction of optical scatter in coated metal surfaces , 1986 .

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[5]  Sey-Shing Sun Internal stress in ion beam sputtered molybdenum films , 1986 .

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[7]  J. McNeil,et al.  Summary Abstract: Ion‐assisted deposition of Ta2O5 and Al2O3 thin films , 1986 .

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[9]  D. Smith,et al.  Reactive radio frequency sputter deposition of higher nitrides of titanium, zirconium, and hafnium , 1986 .

[10]  K. Müller Summary Abstract: Monte Carlo calculation for ion‐assisted thin film deposition , 1986 .

[11]  P. Martin,et al.  Nucleation and growth studies of gold films prepared by evaporation and ion-assisted deposition , 1986 .

[12]  K. Müller Monte Carlo calculation for structural modifications in ion‐assisted thin film deposition due to thermal spikes , 1986 .

[13]  Huang,et al.  Optical and electrical properties of thin silver films grown under ion bombardment. , 1986, Physical review. B, Condensed matter.

[14]  J. Cuomo,et al.  Stress modification of WSi2.2 films by concurrent low energy ion bombardment during alloy evaporation , 1985 .

[15]  T. C. Huang,et al.  Effect of ion bombardment during deposition on the x‐ray microstructure of thin silver films , 1985 .

[16]  T. C. Huang,et al.  Interpretation of the nonbulklike optical density of thin copper films grown under ion bombardment. , 1985 .

[17]  S. Sie,et al.  Properties of CeO2 thin films prepared by oxygen-ion-assisted deposition. , 1985, Applied optics.

[18]  J. Cuomo,et al.  Synthesis of compound thin films by dual ion beam deposition. II. Properties of aluminum‐nitrogen films , 1985 .

[19]  H. Demiryont,et al.  Summary Abstract: Ion‐beam sputter deposition of oxide films , 1985 .

[20]  D. W. Hoffman,et al.  The influence of discharge current on the intrinsic stress in Mo films deposited using cylindrical and planar magnetron sputtering sources , 1985 .

[21]  S. Rossnagel,et al.  X‐ray photoelectron spectroscopy of ion beam sputter deposited SiO2, TiO2, and Ta2O5 , 1984 .

[22]  U. Helmersson,et al.  Structure of reactively magnetron sputtered Hf‐N films , 1984 .

[23]  Jerome J. Cuomo,et al.  Quantitative ion beam process for the deposition of compound thin films , 1983 .

[24]  C. Ting,et al.  ZrN diffusion barrier in aluminum metallization schemes , 1983 .

[25]  R. Voss,et al.  Summary Abstract: Cluster formation and the percolation threshold in thin Au films , 1983 .

[26]  R. S. Robinson,et al.  Impact enhanced surface diffusion during impurity induced sputter cone formation , 1982 .

[27]  Harold R. Kaufman,et al.  Technology and applications of broad-beam ion sources used in sputtering. Part I. Ion source technology , 1982 .

[28]  Scott A. Barnett,et al.  Ion surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors , 1982 .

[29]  D. Dobrev Ion-beam-induced texture formation in vacuum-condensed thin metal films☆ , 1982 .

[30]  H. Usui,et al.  Vaporized-metal cluster formation and effect of kinetic energy of ionized clusters on film formation , 1982 .

[31]  Toshinori Takagi,et al.  Role of ions in ion-based film formation , 1982 .

[32]  C. Ting TiN formed by evaporation as a diffusion barrier between Al and Si , 1982 .

[33]  Y. Ishida,et al.  Sputter‐enhanced diffusion phenomena in Cu/Ni alloys at elevated temperatures , 1982 .

[34]  D. S. Yee,et al.  Modification of niobium film stress by low‐energy ion bombardment during deposition , 1982 .

[35]  M. Wittmer Interfacial reactions between aluminum and transition‐metal nitride and carbide films , 1982 .

[36]  D. W. Hoffman,et al.  Internal stresses in amorphous silicon films depositied by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H2 , 1981 .

[37]  E. Hirsch,et al.  Thin film annealing by ion bombardment , 1980 .

[38]  M. Wittmer TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices , 1980 .

[39]  S. Nakahara Microporosity in thin films , 1979 .

[40]  J. C. Fan,et al.  Preparation of Sn‐doped In2O3 (ITO) films at low deposition temperatures by ion‐beam sputtering , 1979 .

[41]  Miko Marinov,et al.  Effect of ion bombardment on the initial stages of thin film growth , 1977 .

[42]  M. Guseva,et al.  Effect of ion irradiation on the formation, structure and properties of thin metal films , 1976 .

[43]  G. J. Kominiak,et al.  Effect of ion bombardment during deposition on thick metal and ceramic deposits , 1974 .

[44]  E. Rudy The crystal structures of Hf3N2 and Hf4N3 , 1970 .

[45]  P. Martin,et al.  Ion-based methods for optical thin film deposition , 1986 .

[46]  P. Martin,et al.  Modification of the optical and structural properties of dielectric ZrO2 films by ion‐assisted deposition , 1984 .

[47]  H A Macleod,et al.  Ion-beam-assisted deposition of thin films. , 1983, Applied optics.

[48]  D. W. Hoffman,et al.  Internal stresses in sputtered chromium , 1977 .

[49]  F. Smith Structure and Electrical Properties of Sputtered Films of Hafnium and Hafnium Compounds , 1970 .