论文信息 - Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy - 字舞流文

Metamorphic 6.00 Å heterojunction bipolar transistors on InP by molecular-beam epitaxy

D. Sawdai | A. Gutierrez-Aitken | A. Cavus | T. Block | C. Monier | V. Gambin | M. Lange | R. Sandhu