论文信息 - Light‐induced dangling bonds in hydrogenated amorphous silicon

Light‐induced dangling bonds in hydrogenated amorphous silicon

After intensive and long illumination of undoped a‐Si:H samples the dark ESR signal is considerably enhanced. The g value of 2.0055 and the linewidth DHpp = 6–7 G leads to the conclusion that the light‐induced defects are single dangling bonds. They disappear again by thermal anneal at about 220 °C.

J. Stuke | H. Dersch | J. Beichler

[1] D. Cahen,et al. Activation analysis of forward‐biased CdS‐electrolyte diode , 1981 .

[2] J. Pankove,et al. Light‐induced radiative recombination centers in hydrogenated amorphous silicon , 1980 .

[3] D. L. Staebler,et al. Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon , 1980 .

[4] J. Stuke,et al. The influence of spin defects on recombination and electronic transport in amorphous silicon , 1980 .

[5] J. Reimer,et al. Proton Magnetic Resonance Spectra of Plasma-Deposited Amorphous Si: H Films , 1980 .

[6] Chuang‐Chuang Tsai,et al. Defect creation and hydrogen evolution in amorphous Si:H , 1980 .

[7] L. Ley,et al. Photoemission studies on in situ prepared hydrogenated amorphous silicon films , 1979 .

[8] B. Movaghar,et al. The influence of the exchange interaction on the E.S.R. linewidth in amorphous silicon , 1979 .

[9] W. Beyer,et al. Interstitial doping of amorphous silicon , 1977 .

[10] D. Staebler,et al. Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .