论文信息 - Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

Experimental and theoretical investigation of terahertz optical-beating detection by plasma waves in high electron mobility transistors

A photomixed laser beam of two 1.55 mm cw lasers is used to obtain interband photoexcitation at the difference frequency and at room temperature in submicron gate-length InAlAs/InGaAs transistors. Results show the clear excitation of plasma oscillation modes in the transistor channel. Fundamental plasma resonant frequency and its odd harmonics can be tuned with the applied gate voltage. Numerical simulations have also been performed using a hydrodynamic approach coupled to a pseudo-2D Poisson equation. Numerical results are in qualitative agreement with experiments and confirm optical beating detection at terahertz frequencies. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

[1] Michael S. Shur,et al. Plasma wave resonant detection of femtosecond pulsed terahertz radiation by a nanometer field-effect transistor , 2005 .

[2] Wojciech Knap,et al. Detection of terahertz radiation in gated two-dimensional structures governed by dc current , 2006 .

[3] Michael S. Shur,et al. Room-temperature plasma waves resonant detection of sub-terahertz radiation by nanometer field-effect transistor , 2005 .

[4] Pavel Shiktorov,et al. Linear and nonlinear analysis of microwave power generation in submicrometer n+nn+ InP diodes , 1994 .

[5] Tunable plasma wave resonant detection of optical beating in high electron mobility transistor , 2006, 2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference.

[6] Shur,et al. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current. , 1993, Physical review letters.

[7] L. Varani,et al. Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕InAlAs transistor , 2005 .

[8] Mohamed A. Osman,et al. Monte Carlo investigation of the electron-hole-interaction effects on the ultrafast relaxation of hot photoexcited carriers in GaAs. , 1987 .