Experimental evidence of inelastic tunneling and new I-V model for stress-induced leakage current
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A. Toriumi | S. Takagi | N. Yasuda | S. Takagi | A. Toriumi | N. Yasuda
[1] M. Hatanaka,et al. A quantitative analysis of stress induced excess current (SIEC) in SiO/sub 2/ films , 1996, Proceedings of International Reliability Physics Symposium.
[2] Akira Toriumi,et al. Stress‐induced leakage current in ultrathin SiO2 films , 1994 .
[3] Seiichi Aritome,et al. Trapped hole enhanced stress induced leakage currents in NAND EEPROM tunnel oxides , 1996, Proceedings of International Reliability Physics Symposium.
[4] J. Maserjian,et al. Observation of positively charged state generation near the Si/SiO2 interface during Fowler–Nordheim tunneling , 1982 .
[5] Robert W. Brodersen,et al. Quantum yield of electron impact ionization in silicon , 1985 .
[6] L. Esaki,et al. Tunneling in a finite superlattice , 1973 .