Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm

We present in this work the study of a short vertical external cavity semiconductor laser in single longitudinal operation at 852 nm without intracavity elements. Two different configurations were studied, a plane-plane configuration, stabilized by the thermal lens and a plane-concave configuration. The influence of the output coupler transmission and the thermal lens has been studied. In the plane concave configuration we have demonstrated more than 100mW in stable single frequency operation using a very compact cavity emitting around 852 nm.

[1]  A. Mooradian,et al.  Design and characteristics of high-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams , 1999 .

[2]  G. Erbert,et al.  High-power 894 nm monolithic distributed-feedback laser. , 2007, Optics express.

[3]  W. Herr,et al.  Narrow bandwidth interference filter-stabilized diode laser systems for the manipulation of neutral atoms , 2007, 0706.2277.

[4]  I. Sagnes,et al.  Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line , 2009 .

[5]  P. Georges,et al.  Thermal lensing in diode-pumped ytterbium Lasers-Part I: theoretical analysis and wavefront measurements , 2004, IEEE Journal of Quantum Electronics.

[6]  E. Riis,et al.  0.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser , 2003, IEEE Photonics Technology Letters.

[7]  D. Romanini,et al.  Single-Frequency operation of External-Cavity VCSELs: Non-linear multimode temporal dynamics and quantum limit. , 2007, Optics express.

[8]  D. Burns,et al.  Thermal lensing, thermal management and transverse mode control in microchip VECSELs , 2006 .

[9]  Route de Nozay.  Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling , 2006 .

[10]  I. Sagnes,et al.  High power single-frequency continuously tunable compact extended-cavity semiconductor laser , 2009, CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference.

[11]  I. Sagnes,et al.  Multiwatt-power highly-coherent compact single-frequency tunable vertical-external-cavity-surface-emitting-semiconductor-laser. , 2010, Optics express.