Dislocations in p-terphenyl

Dislocations intersecting (00l) planes in p-terphenyl have been revealed using the etch-pit technique. By observing different types of etch pits and pronounced alignments in crystallographic directions on (00l) faces of vapour- and melt-grown single crystals, conclusions are drawn regarding the active glide planes. Comparisons are made with anthracene and the stereochemistry of possible full and partial dislocations on (110) is discussed.