论文信息 - 6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs

6% external quantum efficiency from InGaAs/(Al)GaAs single quantum well planar microcavity LEDs

High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have been investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 µW/steradian at 10 mA.

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