论文信息 - LEAKAGE CURRENT AND NOISES IN SURFACE BARRIER PARTICLE DETECTORS. - 字舞流文

LEAKAGE CURRENT AND NOISES IN SURFACE BARRIER PARTICLE DETECTORS.

M. Masuda | H. Chisaka | S. Takeda

[1] L. Monteith. Correlation of I–V Characteristic with Noise for Ion Drifted p‐i‐n Junction Particle Detectors , 1964 .

[2] D. C. Northrop,et al. Semiconductor counters for nuclear radiations , 1963 .

[3] F. Goulding,et al. Leakage current in semiconductor junction radiation detectors and its influence on energy-resolution characteristics , 1961 .

[4] T. M. Buck,et al. Effects of Certain Chemical Treatments and Ambient Atmospheres on Surface Properties of Silicon , 1958 .

[5] W. Eriksen. Field Modulation of Liquid Induced Excess Surface Currents on Germanium p‐n Junctions , 1958 .

[6] H. Statz,et al. Excess Surface Currents on Germanium and Silicon Diodes , 1957 .

[7] A. L. McWhorter,et al. Relaxation Time of Surface States on Germanium , 1956 .

[8] S. Morrison. Slow Surface Reaction on Germanium , 1956 .

[9] H. Statz,et al. Surface States on Silicon and Germanium Surfaces , 1956 .

[10] J. R. Schrieffer,et al. Effective Carrier Mobility in Surface-Space Charge Layers , 1955 .

[11] R. Kingston. Water Vapor and the "Channel" Effect in n-p-n Junction Transistors , 1954 .

[12] W. L. Brown,et al. n -Type Surface Conductivity on p -Type Germanium , 1953 .

[13] W. Shockley,et al. Hot electrons in germanium and Ohm's law , 1951 .