A study of deep level in bulk n‐InP by transient spectroscopy

We report a study of bulk n‐InP by deep level transient spectroscopy. Measurements were made on p+n junction diodes and Schottky barriers in which both electron and hole traps were present. The effects of Zn diffusion, phosphorus partial pressure, and relatively low‐temperature heat treatment were studied. Results indicate the presence of uniformly distributed traps as well as nonuniform traps with higher concentration near the junction in the presence of Zn diffusion. Results further indicate significant changes in the thermally induced trap concentration associated with the removal of excess phosphorus. Significant changes in the trap spectra were also seen at temperatures below that typically used for Zn diffusion and may have important consequences in device fabrication.

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